Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO2 onto Si wafers (in a single run at 390 ◦C and 50mTorr, using GeH4, Si2 H6 and O2) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80K and also at room temperature.
International
Si
JCR
Si
Title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECH
ISBN
0921-5107
Impact factor JCR
1,33
Impact info
Volume
147
Journal number
2
From page
200
To page
204
Month
ENERO
Ranking
Participants
  • Participante: A.C Prieto
  • Participante: M.I. Ortiz
  • Participante: J Jiménez
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Participante: C Ballesteros
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Participante: M. Avella
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)