Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Formation of Ge nanocristals and evolution of the oxide matrix in annealed LPCVD SiGeO films
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
SiGeO films were deposited by LPCVD using Si2H6, GeH4 and O2 as reactive gases and furnace annealed to segregate the possible excess of Si and Ge in the form of nanocrystals embedded in an oxide matrix. For low GeH4VSi2H6 flow ratios and deposition temperatures of 450 C or lower, the deposited film consists of a SiO2 matrix incorporating Ge. No Ge oxides and no nanocrystals are detected. After annealing of the samples with SiO2 matrices at temperatures of 600 C or higher, quasi-spherical isolated Ge nanocrystals with diameters ranging from 4.5 to 9 nm and homogeneously distributed throughout the whole film thickness are formed. In the samples deposited with low GeH4VSi2H6 flow ratios, the original SiO2 matrix holds its composition
International
Si
Congress
9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductor
960
Place
Toledo, España
Reviewers
Si
ISBN/ISSN
Start Date
29/06/2008
End Date
03/07/2008
From page
0
To page
0
Participants
  • Participante: A Kling
  • Participante: C Ballesteros
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Participante: M.I. Ortiz
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Participante: B Morana
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
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