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Memorias de investigación
Communications at congresses:
Raman Spectroscopy of group IV nanostructured semiconductors: influence of size, temperature and stress.
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.
International
Si
Congress
Materials Research Society 2008, Fall Meeting
960
Place
Boston, Massachusetts, EEUU
Reviewers
Si
ISBN/ISSN
Start Date
01/12/2008
End Date
05/12/2008
From page
0
To page
0
Participants
  • Participante: A Prieto
  • Participante: J. Jiménez
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Participante: O Martínez
  • Autor: Tomas Rodriguez Rodriguez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
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