Descripción
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Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation. | |
Internacional
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Si |
Nombre congreso
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Materials Research Society 2008, Fall Meeting |
Tipo de participación
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960 |
Lugar del congreso
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Boston, Massachusetts, EEUU |
Revisores
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Si |
ISBN o ISSN
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DOI
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Fecha inicio congreso
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01/12/2008 |
Fecha fin congreso
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05/12/2008 |
Desde la página
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0 |
Hasta la página
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0 |
Título de las actas
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