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Descripción
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| Laser scribing processes are being extensi ely used in thin-film photovoltaic (PV technology. In particular, the fabricati n of thin-film PV modules requires la er seribing steps for the monolithic series interconnecti n of the cells. In that sense. in order to perfi rm thin-film PV modules based on hydrogenated amorphous silicon (a-Si:H). selective ablation (by mean of laser direct or back-scribing) of this intrin i material is required. Depending on the laser parameters employed in the ablation process (wav length, pulse duration, frequenc and pulse en rgy), the generatian of a thermal affected zone in the vicinity of the patterned area is expectcd, esp cially when laser sources with ns pulse duration are employed. In faet, sueh thermal effee induccd in the a-Si:H intrinsic layer could lead to an impov ri hmcnl of the eleetrical properties of the final module. In this work a mierostrueture study of the zone c!osest to the laser pattemed area was carried out. Miero-Raman speetroscopy was employed for the analy is of laser pattemed a-Si:H laycrsdeposited by PE VD onto glass substratcs. The inOuenee of the laser wav length \-vas cvaluated using three diffi rcnt radiations for the a-Si:H pattemi.ng (355, 532 and 1064 nm). A clear transition from lhe amorphous to highly erystalline síli on is obtained a zones closer to the laser pattemed area were evaluated. | |
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Internacional
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Si |
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DOI
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Edición del Libro
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0 |
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Editorial del Libro
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Edited by A. Ostendorf, T. Graf, D. Petring, A. Otto for the German Scientific Laser Society (WLT) |
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ISBN
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978-3-00-027994-2 |
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Serie
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Título del Libro
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Proceedings of the Fifth International WLT-Conference. Lasers in Manufacturing 2009. LIM 2009 |
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Desde página
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635 |
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Hasta página
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640 |