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Descripción
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| In this work, a compositional and morphological study of GaInP layers grown on Ge substrates is presented. The samples have been evaluated by means of high resolution X-ray diffraction, Rutherford backscattering channeling, atomic force microscopy and scanning electron microscopy. Compositional results from HRXRD and RBS show that the quality of samples close to the lattice match are independent on the composition (Ga or In-rich), although for Ga-rich samples, the spectra from RBS channeling measurements is not equal for one h110i direction and its perpendicular, an effect that does not appear in In-rich samples. Concerning, the morphological results, two typical defects appear on GaInP nucleation layer on Ge substrate the so called arrowhead defects and asymmetric truncated pyramids both orientated along h110i directions. Experiments reveal that the formation of pyramids is independent on the layer composition, while the density of arrowheads increases as the layer gets more Ga-rich. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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SUPERLATTICES AND MICROSTRUCTURES |
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ISSN
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0749-6036 |
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Factor de impacto JCR
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1,211 |
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Información de impacto
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Volumen
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45 |
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DOI
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Número de revista
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0 |
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