Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Formation of Ge nanocrystals and evolution of the oxide matrix in as-deposited and annealed LPCVD SiGeO films
Year:2009
Research Areas
  • Electronics engineering
Information
Abstract
SiGeO films were deposited by LPCVD using Si2H6, GeH4 and O2 as reactive gases and furnace annealed to segregate the possible excess of Si and Ge in the form of nanocrystals embedded in an oxide matrix. For low GeH4VSi2H6 flow ratios and deposition temperatures of 450 C or lower, the deposited film consists of a SiO2 matrix incorporating Ge. No Ge oxides and no nanocrystals are detected. After annealing of the samples with SiO2 matrices at temperatures of 600 C or higher, quasi-spherical isolated Ge nanocrystals with diameters ranging from 4.5 to 9 nm and homogeneously distributed throughout the whole film thickness are formed. In the samples deposited with low GeH4:Si2H6 flow ratios, the original SiO2 matrix holds its composition.
International
Si
JCR
Si
Title
SUPERLATTICES AND MICROSTRUCTURES
ISBN
0749-6036
Impact factor JCR
1,211
Impact info
Volume
45
10.1016/j.spmi.2008.10.037
Journal number
0
From page
343
To page
348
Month
ENERO
Ranking
Participants
  • Participante: A. Kling (Instituto Tecnológico e Nuclear, Portugal)
  • Participante: C Ballesteros (Universidad Carlos III)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Participante: M. I. Órtiz (Universidad Carlos III)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Participante: B. Morana (Universida Politécnica de Madrid)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)