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Memorias de investigación
Communications at congresses:
Influence of AlN quality on the Transverse and Longitudinal Coupling Coefficients of Acoustic devices
Year:2009
Research Areas
  • Electronics engineering
Information
Abstract
The transverse and longitudinal piezoelectric response of AlN polycrystalline thin films is analyzed by means of measurements in surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices fabricated on films of identical characteristics. The crystal quality of the films is correlated with the measured coupling factors; it is found that the presence of grains with the c-axis tilted with respect to the substrate normal is detrimental to the piezoelectric response of AlN. However, the presence of tilted crystal affects differently the longitudinal and transverse response of the devices, degrading more severely the latter as the amount of tilted grains increases. The presence of such defects leads to the destruction of the mechanical coherence in the transverse deformation when the electric field parallel to the surface is applied.
International
Si
Congress
2009 IEEE International Ultrasonics Symposium
960
Place
Roma, Italia
Reviewers
Si
ISBN/ISSN
1051-0117
Start Date
20/09/2009
End Date
23/09/2009
From page
2174
To page
2177
2009 IEEE International Ultrasonics Symposium Proc.
Participants
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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