Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Optimization of laser processes in n+ emitter formation for c-Si solar cells
Year:2009
Research Areas
  • Construction materials
Information
Abstract
Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus diffusion was confirmed by Secondary Ion Mass Spectroscopy. We explored the effect of pulse energy and number of pulses per diffused point. The results show that a fine tune of the energy pulse is critical while the number of pulses has minor effects. Scanning Electron Microscopy (SEM) pictures and optical profilometry showed a laser affected area where the c-Si is melted, ejected and solidified quickly again. Typically, the diameter of the affected area for 1064 nm laser is between two and four times greater than for 532 nm laser. Optimum parameters for both lasers were determined to obtain best J-V curves nearly to ideal diode behavior. Comparing best J-V results, lower emitter saturation current density (Jo) and contact resistance are obtained with 532 nm laser. The improvement in Jo can be related mainly to the smaller affected areas observed by SEM while lower contact resistance can be attributed to that 532 nm laser has a more superficial action resulting in higher phosphorus concentration at the surface. The expected open voltage circuit for finished solar cells using these emitters is in the range of 640 mV for 532 nm laser and 620 mV for 1064 nm one.
International
Si
Congress
24th European Photovoltaic Solar Energy Conference
960
Place
Hamburgo, Alemania
Reviewers
Si
ISBN/ISSN
3-936338-25-6
Start Date
21/09/2009
End Date
25/09/2009
From page
1798
To page
1802
Proceedings of the International Conference 24th European Photovoltaic Solar Energy Conference and Exhibition
Participants
  • Participante: A. Orpella (Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluña)
  • Participante: S. Blanque (Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluña)
  • Participante: I. Martín (Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluña)
  • Autor: Maria Isabel Sanchez Aniorte (UPM)
  • Participante: C. Voz (Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluña)
  • Autor: Mónica Colina Brito (UPM)
  • Participante: R. Alcubilla (Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluña)
  • Autor: Carlos Luis Molpeceres Alvarez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Ingeniería y Aplicaciones del Láser
  • Centro o Instituto I+D+i: Centro Laser
  • Departamento: Automática, Ingeniería Electrónica e Informática Industrial
  • Departamento: Física Aplicada a la Ingeniería Industrial
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