Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Formation of nanocrystals and evolution of the oxide matrix in annealed LPCVD SiGeO films
Year:2009
Research Areas
  • Electronics engineering
Information
Abstract
SiGeO films were deposited by LPCVD using Si2H6, GeH4 and O2 as reactive gases and furnace annealed to segregate the possible excess of Si and Ge in the form of nanocrystals embedded in an oxide matrix. For low GeH4VSi2H6 flow ratios and deposition temperatures of 450 ºC or lower, the deposited film consists of a SiO2 matrix incorporating Ge. No Ge oxides and no nanocrystals are detected. After annealing of the samples with SiO2 matrices at temperatures of 600 ºC or higher, quasi-spherical isolated Ge nanocrystals with diameters ranging from 4.5 to 9 nm and homogeneously distributed throughout the whole film thickness are formed. In the samples deposited with low GeH4VSi2H6 flow ratios, the original SiO2 matrix holds its composition
International
Si
JCR
No
Title
Superlattices and Microstructures
ISBN
0749-6036
Impact factor JCR
0
Impact info
Volume
45
Journal number
0
From page
343
To page
348
Month
ENERO
Ranking
Participants
  • Autor: Ballesteros C.
  • Autor: Morana B.
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Ortiz M.I.
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Kling A.
  • Autor: Tomas Rodriguez Rodriguez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)