Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Raman spectroscopy of group IV nanostructured semiconductors: influence of size, temperature and stress
Year:2009
Research Areas
  • Electronics engineering
Information
Abstract
Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.
International
Si
JCR
No
Title
Applications of Group IV Semiconductor Nanostructures. Materials Research Society
ISBN
Impact factor JCR
0
Impact info
Volume
Journal number
0
From page
1
To page
6
Month
ENERO
Ranking
Participants
  • Participante: O. Martínez
  • Participante: A.C. Prieto
  • Autor: Francisco J. Jimenez Leube (UPM)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)