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Descripción
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| We report on the fabrication and characterization of Mo/Au bilayers for TES: Mo films were deposited on silicon nitride (membranes and layers) by room temperature sputtering in a UHV chamber (base pressure 10-9mb). A thorough analysis of the structural, electric and superconducting properties of the Mo films has been carried out in order to optimize the film properties. Au layers were deposited either in-situ by DC sputtering and ex-situ by e-beam. Since the latter display better electrical properties, we have designed a novel approach for the Mo/Au bilayers, depositing two Au layers: first an in-situ thin layer Au1 by sputtering to protect the Mo layer from environmental conditions, and afterwards a second layer Au2 by e-beam. Critical temperatures Tc between 900mK and 100mK have been measured for these Mo/Au1/Au2 heterostructures. The proximity effect is analysed in terms of the evolution of Tc with the Mo and Au thicknesses and properties. | |
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Internacional
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No |
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Nombre congreso
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VI Reunión Grupo Especializado de Fisica de Estado Solido. GEFES 2010 |
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Tipo de participación
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960 |
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Lugar del congreso
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Zaragoza |
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Revisores
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No |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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03/02/2010 |
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Fecha fin congreso
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05/02/2010 |
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0 |
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Hasta la página
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0 |
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