Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Superconducting Mo/Au proximity bilayers for cryogenic radiation detectors
Year:2010
Research Areas
  • Mechanical aeronautics and naval engineering
Information
Abstract
We report on the fabrication and characterization of Mo/Au bilayers for TES: Mo films were deposited on silicon nitride (membranes and layers) by room temperature sputtering in a UHV chamber (base pressure 10-9mb). A thorough analysis of the structural, electric and superconducting properties of the Mo films has been carried out in order to optimize the film properties. Au layers were deposited either in-situ by DC sputtering and ex-situ by e-beam. Since the latter display better electrical properties, we have designed a novel approach for the Mo/Au bilayers, depositing two Au layers: first an in-situ thin layer Au1 by sputtering to protect the Mo layer from environmental conditions, and afterwards a second layer Au2 by e-beam. Critical temperatures Tc between 900mK and 100mK have been measured for these Mo/Au1/Au2 heterostructures. The proximity effect is analysed in terms of the evolution of Tc with the Mo and Au thicknesses and properties.
International
No
Congress
VI Reunión Grupo Especializado de Fisica de Estado Solido. GEFES 2010
960
Place
Zaragoza
Reviewers
No
ISBN/ISSN
Start Date
03/02/2010
End Date
05/02/2010
From page
0
To page
0
Participants
  • Autor: Raquel Gonzalez Arrabal (UPM)
  • Autor: L. FABREGA (1Institut de Ciència de Materials de Barcelona )
  • Autor: M. PARRA-BORDERIAS (Instituto de Ciencia de Materiales de Aragón )
  • Autor: I. FERNANDEZ-MARTINEZ (Instituto de Microelectrónica de Madrid )
  • Autor: O. GIL (Institut de Ciència de Materials de Barcelona )
  • Autor: A. CAMON (Instituto de Ciencia de Materiales de Aragón )
  • Autor: J. SESSE (Instituto de Nanociencia de Aragón )
  • Autor: J. COSTA-KRAMMER (Instituto de Microelectrónica de Madrid )
  • Autor: F. BARTOLOME (Instituto de Ciencia de Materiales de Aragón )
  • Autor: F. BRIONES (Instituto de Microelectrónica de Madrid )
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear
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