Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 1018 cm−3) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface.
International
Si
JCR
Si
Title
APPL SURF SCI
ISBN
0169-4332
Impact factor JCR
1,406
Impact info
Volume
253
Journal number
11
From page
5052
To page
5066
Month
MARZO
Ranking
Participants
  • Participante: José Ramón Ramos Barrado (Universidad de Málaga)
  • Participante: M. C. López (Universidad de Málaga)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Participante: Mercedes Gabas (Universidad de Málaga)
  • Autor: Beatriz Galiana Blanco (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)