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Descripción
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| A gold-free metallization is proposed to be used as the grid contact in III¿V concentrator solar cells. This metallization is based on the Cu/Ge system which has been reported to attain very low specific contact resistances on n-GaAs. In this letter, we show that metal layers with low resistivity (13 μΩ cm) can be obtained if the copper content in the alloy is around 28% in weight for a wide range of annealing temperatures (400¿450 °C). Finally, this metallization has been used to manufacture single-junction GaAs high concentrator solar cells. Efficiencies of 26.2% at 1000 suns have been reached. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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SOL ENERG MAT SOL C |
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ISSN
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0927-0248 |
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Factor de impacto JCR
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2,002 |
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Información de impacto
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Volumen
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91 |
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DOI
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Número de revista
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9 |
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Desde la página
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847 |
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Hasta la página
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850 |
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Mes
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MAYO |
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Ranking
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