Descripción
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In this work, we analyze the in¿uence of the processing pressure and the substrate¿target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin ¿lms deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HRXRD). The ¿lms exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature¿ an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin ¿lms of different thickness. The degree of c-axis orientation was not affected by the target¿substrate distance as it was varied in between 30 and 70 mm. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS |
ISSN
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0946-7076 |
Factor de impacto JCR
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1,025 |
Información de impacto
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Volumen
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17 |
DOI
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10.1007/s00542-010-1198-2 |
Número de revista
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3 |
Desde la página
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381 |
Hasta la página
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386 |
Mes
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ENERO |
Ranking
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