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Memorias de investigación
Communications at congresses:
ARXPS characterization of InGaP/GaAs hetereointerface grown by MOVPE
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by Metal Organic Vapor Phase Epitaxy (MOVPE), by means of Xray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sputtering and by angle resolved XPS (ARXPS). Firstly, from the corrected Auger parameter for different angles, we have determined the depth of the Ga oxide in the superficial GaAs layer by environmental contamination and we have studied its influence in the interface. The thickness of Ga2O3 is only of some Armstrong and it no presents an important influence in the interface.
International
Si
Congress
2007 Spanish Conference on Electron Devices
960
Place
San Lorenzo de El Escorial (Madrid)
Reviewers
Si
ISBN/ISSN
1-4244-0868-7
Start Date
31/01/2007
End Date
02/02/2007
From page
To page
Participants
  • Participante: José Ramón Ramos Barrado (Universidad de Málaga)
  • Participante: M. C. López (Universidad de Málaga)
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Participante: Mercedes Gabas (Universidad de Málaga)
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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