Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
Year:2010
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Intermediate band solar cells (IBSCs) fabricated to date from In (Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3468520]
International
Si
JCR
Si
Title
JOURNAL OF APPLIED PHYSICS
ISBN
0021-8979
Impact factor JCR
2,072
Impact info
Volume
108
Journal number
From page
064513-1
To page
064513-7
Month
ENERO
Ranking
Participants
  • Autor: Elisa Antolin Fernandez (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Pablo Garcia-Linares Fontes (UPM)
  • Autor: Estela Hernandez Martin (UPM)
  • Autor: Antonio Luque Lopez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)