Descripción
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Single crystals of CuGaS2 have been grown by chemical vapour transport. Their near-band gap photoluminescence properties were investigated in the temperature range of 10-300 K. The variation of the exciton gap energy with temperature was studied by means of a three-parameter thermodynamic model, the Einstein model and the Passler model. Values of the band gap at T=0 K, of a dimensionless constant related to the electron-phonon coupling, and of an effective and a cut-off phonon energy have been estimated. It has also been found that the major contribution of phonons to the shift of E-g as a function of Tin CuGaS2 is mainly from optical phonons. (C) 2010 Elsevier B.V. All rights reserved. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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PHYSICA B-CONDENSED MATTER |
ISSN
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0921-4526 |
Factor de impacto JCR
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1,056 |
Información de impacto
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Volumen
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405 |
DOI
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Número de revista
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Desde la página
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3547 |
Hasta la página
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3550 |
Mes
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SEPTIEMBRE |
Ranking
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