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Descripción
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| The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology is presented. | |
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Internacional
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Si |
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Nombre congreso
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Microwave Integrated Circuits Conference (EuMIC), 2010 European |
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Tipo de participación
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960 |
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Lugar del congreso
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Paris, Francia |
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Revisores
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Si |
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ISBN o ISSN
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978-2-87487-017-0 |
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DOI
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Fecha inicio congreso
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27/09/2010 |
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Fecha fin congreso
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28/09/2010 |
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Desde la página
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232 |
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Hasta la página
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233 |
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Título de las actas
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Proceedings of the EuMIC 2010 |