Memorias de investigación
Artículos en revistas:
Intermediate band position modulated by Zn addition in Ti doped CuGaS2
Año:2010
Áreas de investigación
  • Química,
  • Fisica sb -- semiconductores y estructura de bandas
Datos
Descripción
Many works have been done recently with the aim of obtaining intermediate band semiconductors, due to the significant importance of improving solar cell efficiency. Intermediate band materials based on CuGaS2 chalcopyrite semiconductor are one of the proposedmaterials and specifically Ti doped CuGaS2 is a promising structure to form the intermediate band. Here we present an ab-initio study using the density functional theory in this type of intermediate band chalcogens. Several concentrations of Ti and Zn substituting Ga atoms have been studied and their electronic densities of states were obtained. Results demonstrate a chalcopyrite semiconductor band-gap shortening and intermediate band position modulation inside this band-gap by Zn addition.
Internacional
Si
JCR del ISI
Si
Título de la revista
THIN SOLID FILMS
ISSN
0040-6090
Factor de impacto JCR
1,727
Información de impacto
Volumen
DOI
10.10167j.tsf.2010.12.136
Número de revista
Desde la página
28415-1
Hasta la página
28415-5
Mes
ENERO
Ranking
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar