Memorias de investigación
Ponencias en congresos:
Advances in quantum dot intermediate band solar cells
Año:2010
Áreas de investigación
  • Fisica sb -- semiconductores y estructura de bandas
Datos
Descripción
Several groups have reported on intermediate band solar cells (IBSC) fabricated with InAs/GaAs quantum dots (QD) which exhibit quantum efficiencies (QE) for sub-bandgap photon energies. However, this QE is produced by the absorption of photons only through valence band (VB) to intermediate band (IB) transitions. The absorption of photons of that energy in IB to conduction band (CB) transitions is weak and is usually replaced by carrier escape. This mechanism is incompatible with the preservation of the output voltage, and therefore, it cannot lead to the high efficiencies predicted by the IBSC model. In this work, we discuss the contribution of thermal and tunneling mechanisms to IB-CB carrier escape in current QD-IBSCs. It is experimentally demonstrated that in QDIBSC prototypes where tunnel escape has been eliminated, the sub-bandgap QE is suppressed at sufficiently low temperatures, and when this occurs, the only limit for the open-circuit voltage (VOC) is the fundamental semiconductor bandgap, as stated by the IBSC theoretical model
Internacional
Si
Nombre congreso
35th IEEE Photovoltaic Specialists Conference
Tipo de participación
960
Lugar del congreso
Hawaii, Honolulu (EEUU)
Revisores
Si
ISBN o ISSN
978-1-4244-5891-2
DOI
Fecha inicio congreso
20/06/2010
Fecha fin congreso
25/06/2010
Desde la página
65
Hasta la página
70
Título de las actas
Proc. 35th IEEE Photovoltaic Specialists Conference
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar