Descripción
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The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%. | |
Internacional
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Si |
Nombre congreso
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25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion |
Tipo de participación
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960 |
Lugar del congreso
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Valencia (España) |
Revisores
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Si |
ISBN o ISSN
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3-936338-26-4 |
DOI
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Fecha inicio congreso
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06/10/2010 |
Fecha fin congreso
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10/09/2010 |
Desde la página
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65 |
Hasta la página
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68 |
Título de las actas
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Proc. 25th EU PVSEC/5th WCPEC |