Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Raising the efficiency limit of the GaAs-based intermediate band solar cell through the implementation of a mololithic tandem with an AlGaAs top cell
Year:2010
Research Areas
  • Physics - Semiconductors and band structure
Information
Abstract
The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%.
International
Si
Congress
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion
960
Place
Valencia (España)
Reviewers
Si
ISBN/ISSN
3-936338-26-4
Start Date
06/10/2010
End Date
10/09/2010
From page
65
To page
68
Proc. 25th EU PVSEC/5th WCPEC
Participants
  • Autor: Elisa Antolin Fernandez (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Pablo Garcia-Linares Fontes (UPM)
  • Autor: Iñigo Ramiro Gonzalez (UPM)
  • Autor: Estela Hernandez Martin (UPM)
  • Autor: Antonio Luque Lopez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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