Memorias de investigación
Ponencias en congresos:
Numerical simulation of III-V solar cells using D-AMPS
Año:2010
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. Here, we present results obtained using the code D-AMPS-1D, that was conveniently modified to consider the particularities of III-V solar cell devices. This work, that is a continuation of a previous paper regarding solar cells for space applications, is focused on solar cells structures than find application for terrestrial use under concentrated solar illumination. The devices were fabricated at the Solar Energy Institute of the Technical University of Madrid (UPM). The first simulations results on InGaP cells are presented. The influence of band offsets and band bending at the window-emitter interface on the quantum efficiency was studied. A remarkable match of the experimental quantum efficiency was obtained. Finally, numerical simulation of single junction n-p InGaP-Ge solar cells was performed.
Internacional
Si
Nombre congreso
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion
Tipo de participación
960
Lugar del congreso
Valencia
Revisores
Si
ISBN o ISSN
3-936338-26-4
DOI
Fecha inicio congreso
06/09/2010
Fecha fin congreso
10/09/2010
Desde la página
937
Hasta la página
940
Título de las actas
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar