Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Optimization of a Pixellated CdZnTe/CdTe Detector for a Multi-Modality Imaging System
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
The operation of any semiconductor detector depends on the charges movement created in the material after energy deposition. The charge in the bulk semiconductor induces image charges on the metal electrodes and therefore the charge movement towards the electrodes induces a current in the electrodes and external circuit. The details of how quickly and how far the bulk charge travels depend on the material parameters of mobility (μ) and lifetime (τ), as well as the operating electric fields (E). The amount of image charge present at any instant of time (for a given amount of bulk charge) depends on the position of the bulk charge and the weighting potential of the electrode, which depends on the device structure and biasing. The design of the detector can therefore have a significant impact on its spectral performance.
International
Si
Congress
IEEE Nuclear Science Symposium
960
Place
Honolulu, Hawaii - USA
Reviewers
Si
ISBN/ISSN
978-1-4244-0923-5
Start Date
27/10/2007
End Date
03/11/2007
From page
To page
Participants
  • autor: D. Visvikis (LaTIM, Brest, France)
  • Autor: Pedro Guerra Gutierrez (UPM)
  • autor: D. Darambara (Instituto Investigacion Cancer - Londres)
  • Autor: Andres de Santos Lleo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Tecnología de imágenes biomédicas
  • Departamento: Ingeniería Electrónica
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