Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Chemical Characterization of GaAs/InGaP Hetereointerfaces Grown by Metal Organic Vapor Phase Epitaxy (MOVPE) by XPS and ARXPS
Year:2007
Research Areas
  • Electronic circuits,
  • Electronic devices
Information
Abstract
This paper studies the chemical composition of uplayers of the heterointerfaces GaAs/InGaP and InGaP/GaAs, grown by Metal Organic Vapor Pahse Epitaxy (MOVPE), after they were exposed to environmetal contamination, by means of -ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ spettering ans by angle resolved XPS (ARXPS). We have determined the depth of the oxides in the superficial GaAs and InGaP layers, and we also have studied by ARXPS the profile of change of the chemical composition through the uplayer and its influence on the heterointerface.
International
Si
Congress
22nd European Photovoltaic Solar Energy Conference
960
Place
Milán (Italia)
Reviewers
Si
ISBN/ISSN
3-936338-22-1
Start Date
03/09/2007
End Date
07/09/2007
From page
To page
Participants
  • Autor: F. Martín (Universidad de Málaga)
  • Autor: M. Gabas (Universidad de Málaga)
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: M.C. López (Universidad de Málaga)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: J.R. Ramos-Barrado (Universidad de Málaga)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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