Descripción
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Solid state light sources based on compound semiconductors are opening a new era in general lighting and will contribute significantly to a sustainable energy saving. For a successful and broad penetration of LEDs into the general lighting market two key factors are required: high efficiency and low cost. Two new disruptive technologies based on nano-structured semiconductors are proposed to address these key factors. A novel epitaxial growth technique based on nano-rod coalescence will be explored to realize ultra-low defect density templates which will enable strain-relieved growth of LEDs and thus achieve higher efficiency. The second highly innovative approach is the growth of directly emitting Gallium nitride based nano-rod structures. These structures are expected to produce exceptionally high efficiency devices covering the whole visible spectrum and even phosphor-free white LEDs. Significantly, our new nano-structured compound semiconductor based technology will enable LED growth on low-cost and large-area substrates (e.g., Silicon) as wafer bowing will be eliminated and thus lead to a dramatic reduction in production costs. |
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Internacional
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Si |
Tipo de proyecto
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Proyectos y convenios en convocatorias públicas competitivas |
Entidad financiadora
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Comisión Europea |
Nacionalidad Entidad
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BELGICA |
Tamaño de la entidad
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Grande |
Fecha concesión
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20/11/2009 |