Descripción
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This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The in- ?uence of the ?lm thickness on the SAW device response has been studied. Optimized thin ?lms combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with ?nger width and pitch of 200 nm operating in the 10?14 GHz range with up to 36 dB out-of-band rejection. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Electron Device Letters |
ISSN
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0741-3106 |
Factor de impacto JCR
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0 |
Información de impacto
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Volumen
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33 |
DOI
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Número de revista
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4 |
Desde la página
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495 |
Hasta la página
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497 |
Mes
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SIN MES |
Ranking
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