Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Jose Maria Ulloa Herrero
Categoría Investigador
L.D. PRF.CONTR.DOCT. R.A. (I3)
Cargos actuales
ADJUNTO DIRECCIÓN E.T.S..
Escuela UPM
E.T.S. DE ING. DE CAMINOS CANALES Y P.
Departamento:
CIENCIA DE MATERIALES (N)
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
josem.ulloa
upm.es
Teléfono (Directorio UPM)
910672597
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
15 Proyectos de I+D+i
1: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
2: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
3: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
4: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
5: (2008)
Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
6: (2008)
Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
7: (2010)
DISPOSITIVOS NANOFOTONICOS PARA COMUNICACIONES OPTICAS
8: (2011)
DISPOSITIVOS NANOFOTÓNICOS PARA COMUNICACIONES ÓPTICAS
9: (2011)
SUBVENCIÓN DEL PROGRAMA RAMÓN Y CAJAL.- AYUDA ADICIONAL A JOSÉ MARIA ULLOA HERRERO.
10: (2011)
SUBVENCIÓN DEL PROGRAMA RAMÓN Y CAJAL DE JOSÉ MARIA ULLOA HERRERO.
11: (2014)
ALEACIONES EMERGENTES DE NITRUROS DILUIDOS III-V Y NANOESTRUCTURAS RELACIONADAS PARA APLICACIONES FOTOVOLTÁICAS Y DE FOTODECTECCIÓN DE ALTA EFICIENCIA
12: (2015)
NANODILNIT: Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia
13: (2015)
Zoterac: Zinc Oxide For TeraHertz Cascade Devices
14: (2016)
NanoSb-GBSC: Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia
15: (2017)
Novel Sb-containing nanostructure architectures for high efficiency photovoltaic applications
Formación de Investigadores y Movilidad
9 Estancias y sabáticos recogidos en programas oficiales
1: (2008)
ESTANCIA DEL DR. JOSE MARÍA ULLOA HERRERO, CENTRO: Technical University Eindhoven LOCALIDAD: Eindhoven PAÍS: Países Bajos AÑO: 2008 DURACIÓN: 5 meses TEMA: Estudio de las propiedades estructurales de nanostructuras semiconductoras cero-dimensionales
2: (2009)
D. José María Ulloa Herrero Technical University Eindhoven Eindhoven, The Nederlands 2009
3: (2016)
Estancia del Dr. José María Ulloa. Univesity of Belgrade
4: (2017)
Estancia breve de Urs Aeberhard.- Organismo IEK-5 Photovoltaik, Forshungszentrum Julich.
5: (2017)
Estancia de Prof. Jelena Radovanovic, programa de movilidad Erasmus+ Mobility Agreement Staff Mobility for teaching.
6: (2017)
Estancia, Erasmus, Master Project.- Lazar Stanojevic
7: (2017)
Estancia, Erasmus, Master Project.- Lazar Stanojevic
8: (2017)
Estancia, Erasmus, Master Project.- Lazar Stanojevic programa de movilidad Erasmus+ Mobility Agreement
9: (2017)
Estancia, Erasmus, Master Project.- Lazar Stanojevic programa de movilidad Erasmus+ Mobility Agreement
3 Tesis Doctorales
1: (2015)
Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
2: (2017)
Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices
3: (2019)
Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells
Difusión de Resultados de Investigación
114 Artículos en revistas
1: (2007)
A. WIERTS, J.M. ULLOA, C. ÇELEBI, P.M. KOENRAAD, H. BOUKARI, L. MAINGAULT, R. ANDRÉ, H. MARIETTE "Cross-sectional scanning tunnelling microscopy study on II-VI multilayer structures" Applied Physics Letters, 91, 161907-161909 (2007) ISSN: 0003-6951
2: (2007)
J. M. ULLOA, C. ÇELEBI, P. M. KOENRAAD, A. SIMON, E. GAPIHAN, A. LETOUBLON, N. BERTRU, I. DROUZAS, D.J. MOWBRAY, M.J. STEER, M. HOPKINSON "Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots"Journal of Applied Physics, 101, 081707-081712 (2007) ISSN: 0021-8979
3: (2007)
J. M. ULLOA, I. W. D. DROUZAS, P. M. KOENRAAD, D.J. MOWBRAY, M.J. STEER, H. Y. LIU, M. HOPKINSON "Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer" Applied Physics Letters 90, 213105-213108 (2007) ISSN: 0003-6951
4: (2007)
J. M. ULLOA, P. M. KOENRAAD, E. GAPIHAN, A. LÉTOUBLON, N. BERTRU. "Double capping of MBE grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy" Applied Physics Letters, 91, 073106-073109 (2007) ISSN: 0003-6951
5: (2007)
L. OUATTARA, J. M. ULLOA, A. MIKKELSEN, E. LUNDGREN, P. M. KOENRAAD, M. BORGSTRÖM, L. SAMUELSON, W. SEIFERT "Correlation lengths in stacked quantum dot systems: Experiment and Theory" Nanotechnology, 18,145403 -145406 (2007) ISSN: 0957-4484
6: (2008)
Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
7: (2008)
Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy
8: (2008)
Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires
9: (2008)
Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy
10: (2009)
A.HIERRO, G. TABARES, J. M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in Zn1-xMgxO/sapphire" Applied Physics Letters, 94, 232101-1, 232101-3 (2009)
11: (2009)
J. M. ULLOA, M. BOZKURT, P. M. KOENRAAD "Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by crossectional scanning tunnelling microscopy" Solid State Comunications, R, 149, 1410 (2009)
12: (2009)
J.H. BLOKLAND, M. BOZKURT, J.M. ULLOA, D. REUTER, A.D. WIECK, P.M. KOENRAAD, P.C.M. CHRISTIANEN, J.C. MAAN "Ellipsoidal InAs quantum dots observed by cross-sectional STM" Applied Physics Letters, 94, 023107 (2009)
13: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
14: (2009)
R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
15: (2009)
V. HAXHA, I. DROUZAS, J.M. ULLOA, M. BOZKURT, P.M. KOENRAAD, D.J. MOWBRAY, H.Y. LIU, M.J. STEER, M. HOPKINSON, M.A. MIGLIORATO "Role of Segregation in InAs/GaAs Quantum Dot Structures Capped with a GaAsSb Strain Reduction Layer" Physical Review B 80, 165334 (2009)
16: (2009)
V. HAXHA, R.GARG, M.A.MIGLIORATO, I.W.DROUZAS, J.M.ULLOA, P.M.KOENRAAD, M.J.STEER, H.Y.LIU, M.J.HOPKINSON, D.J.MOWBRAY "Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers" Microelectronics Journal 40, 533-536 (2009)
17: (2009)
V. MLINAR, M. BOZKURT, J. M. ULLOA, M. EDIGER, G. BESTER, A. BADOLATO, P. M. KOENRAAD, R. J. WARBURTON, A. ZUNGER "Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop" Physical Review B, 80, 165425 (2009)
18: (2010)
A. NAKAMURA,T. HAYASHI , A.HIERRO, G.TABARES, J.M.ULLOA, E.MUÑOZ, J. TEMMYO, "Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD" Phys. Status Solidi B 247, 1472-1475, 2010.
19: (2010)
Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
20: (2010)
External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
21: (2010)
G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
22: (2010)
GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations
23: (2010)
High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
24: (2010)
J.M. ULLOA, P. M. KOENRAAD, M. BONNET-EYMARD, A. LÉTOUBLON, N. BERTRU ''Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots'' J. Appl. Phys. 107, 074309 (2010)
25: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
26: (2010)
M. BOZKURT, V. A. GRANT, J. M. ULLOA, R. P. CAMPION, C. T. FOXON, E. MAREGA, JR., G. J. SALAMO, P. M. KOENRAAD ''Atomic scale characterization of Mn doped InAs/GaAs quantum dots'' Applied Physics Letters, 96, 042108 (2010)
27: (2010)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
28: (2010)
M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
29: (2011)
An atomic scale study on the effect of Sb during capping of MBE grown III-V semiconductor QDs
30: (2011)
Inhibition of In desorption in diluted nitride InAsN quantum dots
31: (2011)
Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
32: (2012)
Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots
33: (2012)
Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots
34: (2012)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
35: (2012)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
36: (2012)
High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
37: (2012)
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
38: (2012)
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
39: (2012)
Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
40: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
41: (2012)
Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
42: (2012)
Self-assembled MgxZn1-xO quantum dots (0¡Ü x ¡Ü1) on different substrates using spray pyrolysis methodology
43: (2012)
Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation
44: (2013)
Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
45: (2013)
Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
46: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
47: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
48: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
49: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
50: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
51: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
52: (2014)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
53: (2014)
GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
54: (2014)
Height control of self-assembled quantum dots by strain engineering during capping
55: (2014)
InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
56: (2014)
Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
57: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
58: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
59: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
60: (2014)
Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
61: (2014)
Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
62: (2014)
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion
63: (2015)
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
64: (2015)
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
65: (2015)
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
66: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
67: (2015)
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
68: (2016)
General route for the decomposition of InAs quantum dots during the capping process
69: (2016)
General route for the decomposition of InAs quantum dots during the capping process
70: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
71: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
72: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
73: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
74: (2016)
Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model
75: (2016)
(S)TEM analysis of the strain and morphology of InAs quantum dots using GaAs(Sb)(N) capping layers for solar cell applications
76: (2016)
(S)TEM analysis of the strain and morphology of InAs quantum dots using GaAs(Sb)(N) capping layers for solar cell applications
77: (2016)
Strain mapping accuracy improve-ment using Super-Resolution techniques
78: (2016)
Strain mapping accuracy improvement using super-resolution techniques
79: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
80: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
81: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
82: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
83: (2016)
Wurtzite Zn1-y(MgxCd1-x)(y)O quaternary systems for photodiodes in visible spectral range
84: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
85: (2017)
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
86: (2017)
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice matching con-dition for 1.0.-1.16 eV photonic applications
87: (2017)
Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications
88: (2017)
Scanning tunneling spectroscopic monitoring of surface states role on water passivation of InGaAs uncapped quantum dots
89: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
90: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
91: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
92: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
93: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
94: (2018)
Breaking the Intersubband Selection Rules for Absorption with ZnO Quantum Wells: Light Polarization Sensitivity under Normal Incidence
95: (2018)
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
96: (2018)
Effect of GaAs(Sb)(N) capping layers on (un)coupled InAs/GaAs multi quantum dot laters for enhanced solar cells
97: (2018)
GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
98: (2018)
Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
99: (2018)
Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
100: (2018)
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
101: (2018)
Multiscale in modelling and validation for solar photovoltaics
102: (2018)
Multisubband Plasmons in Doped ZnO Quantum Wells
103: (2018)
Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
104: (2018)
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
105: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
106: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
107: (2019)
Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices
108: (2019)
Effect of capping rate en InAs/GaAs quantum dot solar cells
109: (2019)
Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
110: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
111: (2019)
Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices
112: (2019)
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
113: (2019)
Optical Phase Transition in Semiconductor Quantum Metamaterials
114: (2019)
Topology Driven g-Factor Tuning in Type-II Quantum Dots
5 Capítulos de libros
1: (2007)
A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
2: (2008)
InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy
3: (2008)
Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
4: (2017)
The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
5: (2018)
From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots
13 Conferencias invitadas en congresos
1: (2012)
Cross-sectional scanning tunneling microscopy of semiconductor nanostructures
2: (2013)
GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
3: (2015)
High sensitivity to environment of InGaAs surface nanostructures
4: (2015)
High sensitivity to environment of InGaAs surface nanostructures
5: (2015)
Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
6: (2016)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
7: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
8: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
9: (2018)
Breakage of the polarization selection rules for intersubband transitions in ZnO/MgZnO quantum wells
10: (2018)
Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
11: (2018)
Phonon-intersubband transition coupling in MgZnO/ZnO quantum wells.
12: (2019)
Interface phonon-polaritons as an all-optical technique to assess the Mg content in ZnO/MgZnO multiple quantum wells
13: (2019)
Using ZnO multiple quantum well metastructures for IR light polarization sensitive photodetection under normal incidence
6 Cursos, seminarios y tutoriales
1: (2009)
Dr. José María Ulloa "1.3- 1.55 µm InAs/GaAs quantum dots capped with GaAsSb: effect of the Sb content on the structural and optical properties" April 24th, 2009
2: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
3: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
4: (2015)
Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
5: (2016)
Curso impartido por el Dr. José María Ulloa Herrero. University of Belgrade
6: (2019)
Diluted nitride type-If superlattices for solar cells
9 Otras Publicaciones
1: (2014)
2.18 ?m Mid IR emission from highly transparent Er3+ doped tellurite glass ceramic for bio applications
2: (2015)
Visionado del experimento del ISOM en programa 'El hormiguero' de Antena 3 Televisión, España. El día 19 de enero 2015 se emitió un experimento montado en el ISOM por el Dr. José María Ulloa Herrero, consistente en hacer invisibles objetos mediante óptica geométrica (Paraxial cloaking). http://www.antena3.com/programas/el-hormiguero/secciones/ciencia-marron/maquina-invisibilizadora-upm_2015011900391.html Dr. José María Ulloa Herrero jmulloa@isom.upm.es
3: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
4: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
5: (2016)
Concesión Premio Caja Ingenieros - 09/12/2016. El jurado designado para fallar la concesión de la VI Edición del Premio SOCIEMAT
6: (2016)
Una medalla Agustín de Betancourt y Molina para el Investigador del ISOM-UPM Dr. José María Ulloa Herrero (Premios Investigadores y Profesionales Jóvenes 2016), ha sido entregada el 22 de noviembre de 2016
7: (2017)
Strain-balanced Type-II superlatices for efficient multi-juntion solar cells
8: (2017)
Web UPM: Entrevista a José María Ulloa, investigador del ISOM que acaba de recibir la medalla como finalista del Premio Agustín de Betancourt y Molina de la Real Academia de Ingeniería: La nanoingeniería de materiales puede aumentar la eficiencia de las células solares
9: (2018)
Impactante nuevo visionado del experimento del ISOM en programa 'El hormiguero' de Antena 3 Televisión, España El día 10 de mayo de 2018 se ha emitido un experimento montado en el ISOM por el Dr. José María Ulloa Herrero, consistente en hacer invisibles objetos mediante óptica geométrica (Paraxial cloaking).
128 Ponencia en Congresos
1: (2007)
I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Génova (Italia) 15 al 20 de julio de 2007
2: (2007)
I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" UK Compound semiconductors 2007 Sheffield (UK) 4 al 5 de Julio de 2007
3: (2007)
I. W.D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. Steer, H. Y. Liu, M. Hopkinson "InAs self-assembled quantum dots with a GaAsSb strain reducing layer: Structural and compositional analysis by cross sectional scanning tunnelling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007
4: (2007)
J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" Microscopy of Semiconducting Materials XV Cambridge (UK) 2 al 5 de abril de 2007
5: (2007)
J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" 14th European Molecular Beam Epitaxy Workshop Granada (España) 5 al 7 de marzo de 2007
6: (2007)
J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru: "Double capping of InAs/InP (311)B quantum dots studied by cross-sectional scanning tunneling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007
7: (2007)
J.H. Blokland, J.M. Ulloa, U. Zeitler, P.C.M. Christianen, P.M. Koenraad, D. Reuter, A.D. Wieck, J.C. Maan "Shell-filling and correlation effects of holes in InAs quantum dots" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Genova (Italia) 15 al 20 de julio de 2007
8: (2007)
J.M. Ulloa, A. Wierts, C. Çelebi, P.M. Koenraad, H. Boukari, L. Maingault, H. Mariette "Cross-Sectional Scanning Tunneling Microscopy on II-VI Semiconductor Multilayer Structures"13th International Conference on II-VI Compounds Jeju (Corea) 10 al 14 de septiembre 2007
9: (2007)
J.M. Ulloa, P.M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru, D. Fuster, Y. Gonzalez, L. Gonzalez "Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires" International Workshop on Long Wavelenght Quantum Dots: Growth and Applications Rennes (Francia) 5 al 6 de Julio de 2007
10: (2008)
Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms 17th Heterostructure Technology Workshop Venice (Italia), 2008
11: (2008)
Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
12: (2008)
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
13: (2008)
Mn and Fe doped InAs quantum dots studied by X-STM 35th International Symposium on Compound Semiconductors (ISCS) Rust (Alemania), 2008
14: (2008)
The influence of Ga composition of GaInAsN QDs on N incorporation.
15: (2008)
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
16: (2008)
The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008
17: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
18: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
19: (2009)
A. NAKAMURA, T. HAYASHI, J. TEMMYO, A. HIERRO, G. TABARES, J.M.ULLOA, E.MUÑOZ "Schottky barrier contacts formed on polar-, nonporlar-MgxZn1-xO film grown by remote-plasma-enhanced MOCVD" Internacional Conference on II-VI Compounds, San Petersburgo, Rusia, 2009
20: (2009)
G.TABARES, A.HIERRO, J.M.ULLOA, E.MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Responsivity and transient response of non-polar Au-MgXZn1-xO Schottky photodiodes" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
21: (2009)
J.M. ULLOA , P.M. KOENRAAD, M. BONNET-EYMARD, A. LÉTOUBLON, D N. BERTRU "Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
22: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
23: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
24: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
25: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "InAs/(Ga,In)(N,As) Quantum Dot LEDs Emitting at 1.3-1.5 ìm" 7th Spanish Conference on Electron Devices 2009 Santiago Compostela (Spain), 2009
26: (2009)
R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
27: (2010)
A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
28: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
29: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
30: (2010)
J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
31: (2010)
J.M. ULLOA, P.M. KOENRAAD, M. HOPKINSON "Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy". European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
32: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
33: (2011)
Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
34: (2011)
Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
35: (2011)
ANALYSIS OF THE PHOTOLUMINESCENCE OF Zn1-XCdXO NANOWIRES UNDER THERMAL ANNEALING
36: (2011)
Analysis of the photoluminescence of zn1-xcdxo nanowires under thermal annealing
37: (2011)
Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
38: (2011)
Gas sensor based on room temperature optical properties of Surface QDs
39: (2011)
J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
40: (2011)
MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
41: (2011)
Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
42: (2011)
Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
43: (2011)
Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
44: (2011)
Oxide based UV photodetection using schottky photodiodes
45: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
46: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
47: (2011)
Room temperature photoluminescence of InGaAs Surface Quantum Dots
48: (2011)
Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
49: (2011)
Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
50: (2011)
Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
51: (2012)
Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
52: (2012)
Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
53: (2012)
Impact of the environment on the optical emission of InGaAs surface quantum dots
54: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
55: (2012)
Optical properties of GaAsSb capped InAs/GaAs self-assembled quantum dots under thermal annealing
56: (2012)
Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD
57: (2012)
Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires
58: (2012)
Top-Hat HELLISH (THH)-VCSOA based on a light emitting and an absorbing for 1.3 µm wavelength operation
59: (2013)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
60: (2013)
High performance environment sensors based on InGaAs surface Quantum Dots.
61: (2013)
Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
62: (2013)
Impact of annealing on the Sb and In distribution in GaAsSb-capped InAs quantum dots
63: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
64: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
65: (2014)
Height control of self-assembled quantum dots
66: (2014)
Morphological and Structural Characterization of MgxZn1-xO?, 8th International Workshop on Zinc Oxide and Related Materials
67: (2014)
Optical Properties of ZnMgO Grown by Spray Pyrolysis and Development of MSM Photodetectors for the UV
68: (2014)
Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
69: (2014)
ZnCdO/ZnO Multiple Quantum Well Nanowires Emitting in the Visible
70: (2014)
2.18 µm Mid IR emission from highly transparent Er 3+ doped tellurite glass ceramic for bio applications
71: (2015)
Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
72: (2015)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
73: (2015)
GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
74: (2015)
General decomposition route of InAs quantum dots during the capping process
75: (2015)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
76: (2015)
Localization of the hole wavefunction in InAs/GaAsSb quantum dots
77: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
78: (2015)
(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) capping layers for Solar Cell Applications
79: (2015)
Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
80: (2016)
Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
81: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
82: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
83: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
84: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
85: (2016)
Evolution of InAs quantum dots/wetting layer system under different GaAs capping layer growth rates
86: (2016)
Infrared intersubband absorption from non-polar homoepitaxial m-ZnO/ZnMgO MQWs
87: (2016)
Quality enhancement and strain measurement in HAADF images using Super-Resolution techniques
88: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
89: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
90: (2016)
Strain measurement inside dumbbells in HAADF images using Super-Resolution techniques
91: (2016)
Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
92: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
93: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
94: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
95: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
96: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
97: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
98: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
99: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
100: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
101: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
102: (2017)
Effect of the capping layer composition and growth rate in the InAs quantum dots/wetting layer system
103: (2017)
Effect of thin GaAs(SbN) capping layers on (un)coupled InAs/GaAs multi-quantum dot layers for enhanced solar cells
104: (2017)
Electrical and transport characteristics of non-polar m-plane Ga:MgxZn1-xO
105: (2017)
Evolution of InAs quantum dots/wetting layer system under different GaAs capping layer growth rates
106: (2017)
Intersubband Transitions and Polarons in (Zn,Mg)O/ZnO Quantum Wells
107: (2017)
New growth approaches to improve the performance in GaAsSbN-based solar cells
108: (2017)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
109: (2018)
Analysis of bismuth segregation in InAsBi/InAs superlattices grown by MBE
110: (2018)
Effect of GaAs(Sb)(N) capping layers on (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
111: (2018)
Effect of GaAs(Sb)(N) capping layers on (un)coupled In/GaAs multi quantum dot layers for enhanced solar cells
112: (2018)
Interfacial phonon resonances in ZnO/MgZnO quantum wells : a compositional calibration tool
113: (2018)
Interplay between carrier lifetime, electronic coupling, and extraction efficency
114: (2018)
Nitrogen mapping from ADF analysis in GaAsSb(N) superlattices for high efficient solar cells
115: (2018)
Strain-balanced ype-II superlattices for efficient multi-junction solar cells
116: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
117: (2019)
Formation of agglomerations in high-density multilayer InAs/GaAs quantum dot structures: the role of Sb in the capping layer
118: (2019)
Analysis of the N distribution in GaAs(Sb)(N) super1attices from ADF imaging
119: (2019)
Effect of capping rate on InAs/GaAs quantum dot solar cells
120: (2019)
Hydrogen Passivation of N:GaAs Studied by Cross-Sectional Scanning Tunneling Microscopy
121: (2019)
Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
122: (2019)
Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
123: (2019)
Influence of GaAsSb capping layers on the vertical-alignment in closely stacked InAs/GaAs multi quantum dots
124: (2019)
Influence of GaAsSb capping layers on the vertical-alignment in closely stacked InAs/GaAs multi quantum dots
125: (2019)
Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
126: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
127: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
128: (2019)
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
