Descripción
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An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (V |
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Internacional
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Si |
Nombre congreso
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37th IEEE Photovoltaic Specialists Conference |
Tipo de participación
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960 |
Lugar del congreso
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Seattle, EEUU |
Revisores
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Si |
ISBN o ISSN
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0160-8371 |
DOI
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10.1109/pvsc.2011.6186491 |
Fecha inicio congreso
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19/06/2011 |
Fecha fin congreso
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24/06/2011 |
Desde la página
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2642 |
Hasta la página
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2645 |
Título de las actas
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Proc. 37th IEEE PVSC |