Abstract
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Copper nitride is a metastable material which results very attractive because of their potential to be used in functional device. Cu3N easily decomposes into Cu and N2 by annealing [1] or irradiation (electron, ions, laser) [2, 3]. d d h f l d d h d Our present aims are: ? To elucidate the responsible mechanism for the nitrogen Previous studies carried out in N-rich Cu3N films irradiated with Cu at 42MeV evidence a very efficient sputtering of N whose yield (5×103 atom/ion), for a film with a thickness of just 100 nm, suggest that the origin of the sputtering has an electronic nature. This N depletion was observed to be responsible for new phase formation ( Cu2O) and pure Cu [4]. | |
International
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Si |
Congress
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20th International Conference on Ion Beam Analysis |
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960 |
Place
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Itapema, Brasil |
Reviewers
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Si |
ISBN/ISSN
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0000-0000 |
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Start Date
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10/04/2011 |
End Date
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15/04/2011 |
From page
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0 |
To page
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0 |
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Proceedings of the Conference |