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Descripción
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| Hall sensor devices are strongly requested for fundamental, industrial and/or military applications. In our laboratory, in collaboration with ITRON-France, we have developed Hall sensors based on III-V Arsenide heterostructures for electricity metering. At high temperature (T>250°C) this type of Hall sensor as well as the usual semiconductors like Si, InSb, InAs or GaAs reach their natural thermal limits. At elevated temperature, the use of a wide band gap material like silicon carbide (SiC) or gallium nitride heterostructures is a prerequisite. With respect to SiC they offer the important advantage over the bulk material to provide a more stable carrier density. In this work, we present experimental results obtained by investigating a series of AlGaN/GaN heterostructures. It is demonstrated that these heterostructures can be used as magnetic sensors in a large temperature range (4.2-750 K) with a magnetic sensitivity close to 60 V/A/T and a small thermal drift (-7 ppm/°C) | |
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Internacional
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No |
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Nombre congreso
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Seminarios del ISOM |
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Entidad organizadora
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ISOM-DIE-ETSIT-UPM |
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Nacionalidad Entidad
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Sin nacionalidad |
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Lugar/Ciudad de impartición
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ISOM-DIE-ETSIT-UPM |
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Fecha inicio
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28/10/2012 |
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Fecha fin
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28/10/2012 |