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Abstract
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| Droplet epitaxy (DE) is a non-conventional growth technique based on molecular beam epitaxy. This method, differently from strain-induced 3-dimensional nanostructures, enables the growth of lattice-matched and strain-free selfassembled III-V nanoemitters. Thanks to the versatility of the DE, different kinds of nanostructures can be realized: quantum dots, coupled quantum dots, quantum rings, multiple concentric quantum rings, quantum disks, as well as combinations of these different shapes. Moreover, DE enables the growth on different substrates orientations (such as the (100), (311)A, (111)A) and, most importantly, it makes possible the growth of bright III-V quantum emitters on substates made of Silicon and Germanium.In this seminar I will introduce some features of growth and photoluminescence spectroscopy of single GaAs/AlGaAs DE nanostructures. In particular I will concentrate on quantum dots and rings addressing their electronic structure, fine structure and line broadening: I will show how composition, shape, geometrical anisotropy and disorder rule the optical properties and how, thanks to recent advances in the DE method, bright and sharp photoluminescence lines can be obtained in circular symmetric quantum dots. Finally I will show recent advancesin the growth of hybrid III-V/IV quantum dots. | |
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International
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No |
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Congress
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Seminarios del ISOM |
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Entity
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ISOM-DIE-ETSIT-UPM |
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Entity Nationality
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Sin nacionalidad |
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Place
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ISOM-DIE-ETSIT-UPM |
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Start Date
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16/12/2012 |
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End Date
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16/12/2012 |