Abstract
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The dissolution and gettering of iron is studied during the final fabrication step of multicrystalline silicon solar cells, the co-firing step, through simulations and experiments. The post-processed interstitial iron concentration is simulated according to the as-grown concentration and distribution of iron within a silicon wafer, both in the presence and absence of the phosphorus emitter, and applying different time-temperature profiles for the firing step. The competing effects of dissolution and gettering during the short annealing process are found to be strongly dependant on the as-grown material quality. Furthermore, increasing the temperature of the firing process leads to a higher dissolution of iron, hardly compensated by the higher diffusivity of impurities. A new defect engineering tool is introduced, the extended co-firing, which could allow an enhanced gettering effect within a small additional time. | |
International
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Si |
Congress
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Silicon PV |
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960 |
Place
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Friburgo, Alemania |
Reviewers
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Si |
ISBN/ISSN
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1876-6102 |
|
10.1016/j.egypro.2011.06.133 |
Start Date
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17/04/2011 |
End Date
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20/04/2011 |
From page
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257 |
To page
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262 |
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Energy Procedia - Silicon PV |