Memorias de investigación
Research Publications in journals:
Si and SixGe1-x NWs studied by Raman spectroscopy
Year:2011
Research Areas
  • Physics chemical and mathematical,
  • Physics - Structure of materials,
  • Electronic technology and of the communications
Information
Abstract
Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation
International
Si
JCR
No
Title
Physica Status Solidi c
ISBN
1610-1642
Impact factor JCR
0
Impact info
Volume
8
Journal number
From page
1307
To page
1310
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Grupo de Investigación: Grupo de Conectividad
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica