Memorias de investigación
Communications at congresses:
Raman spectrum of group IV nanowires: influence of temperature
Year:2011
Research Areas
  • Physics - Structure of materials,
  • Electronic technology and of the communications
Information
Abstract
Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed
International
Si
Congress
Materials Research Society 2010 Fall Meeting
960
Place
Boston USA
Reviewers
Si
ISBN/ISSN
02729172
10.1557/opl.2011.619
Start Date
29/11/2010
End Date
02/12/2010
From page
1
To page
6
MRS Proceedings 2011 1305 : mrsf10-1305-aa12-03 (6 pages)
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica