Memorias de investigación
Communications at congresses:
MicroRaman Spectroscopy of Si Nanowires: Influence of Size
Year:2011
Research Areas
  • Physics - Structure of materials,
  • Electronic technology and of the communications
Information
Abstract
Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs
International
Si
Congress
14th International Conference on Defects Recognition, Imaging and Physics in Semiconductors
960
Place
Miyazaki, Japón
Reviewers
Si
ISBN/ISSN
1662-9752
10.4028/www.scientific.net/MSF.725.255
Start Date
25/09/2011
End Date
29/09/2011
From page
255
To page
258
Materials Science Forum , 725
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica