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Descripción
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| The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26±2 to 33±2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from -5 to -50 ?V/K in the Seebeck coefficient and to large enhancements, from 10e-3 up to 10 ?cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Thin Solid Films |
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ISSN
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0040-6090 |
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Factor de impacto JCR
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1,909 |
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Información de impacto
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Volumen
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DOI
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Número de revista
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Desde la página
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1 |
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Hasta la página
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8 |
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Mes
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SIN MES |
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Ranking
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Q1 |