Memorias de investigación
Research Publications in journals:
Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers
Year:2011

Research Areas
  • Phisics,
  • Physics - Semiconductors and band structure

Information
Abstract
Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability.The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 ?·cm2 were achieved for the contact with 90 nm thick ZnO:Al layer without any post deposition treatment.
International
Si
JCR
No
Title
PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
ISBN
1862-6351
Impact factor JCR
0,49
Impact info
Volume
9
10.1002/pssc.201100146
Journal number
From page
1065
To page
1069
Month
SIN MES
Ranking
Ocupa el puesto 53 de 114 revistas en el área "Condensed Matter Physics" según la base SCImago Journal Rank (SJR 2011)
Participants

Research Group, Departaments and Institutes related
  • Creador: Departamento: Física e Instalaciones Aplicadas a la Edificación, al Medio Ambiente y al Urbanismo