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Memorias de investigación
Artículos en revistas:
Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators
Año:2012
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content <6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.
Internacional
No
JCR del ISI
No
Título de la revista
2012 IEEE International Ultrasonics Symposium Proceedings
ISSN
1051-0117
Factor de impacto JCR
Información de impacto
Volumen
DOI
10.1109/ULTSYM.2012.0685
Número de revista
Desde la página
2734
Hasta la página
2737
Mes
SIN MES
Ranking
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Participantes
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Valeriy Felmetsger (OEM Group Inc.)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica
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