Descripción
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Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 < y < 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Scripta Materialia |
ISSN
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1359-6462 |
Factor de impacto JCR
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2,699 |
Información de impacto
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Volumen
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66 |
DOI
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10.1016/j.scriptamat.2011.11.025 |
Número de revista
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6 |
Desde la página
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351 |
Hasta la página
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354 |
Mes
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SIN MES |
Ranking
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