Memorias de investigación
Artículos en revistas:
Interstitial Ti for intermediate band formation in Ti-supersaturated silicon
Año:2012
Áreas de investigación
  • Química física,
  • Ingeniería eléctrica, electrónica y automática,
  • Dispositivos electrónicos,
  • Silicio,
  • Células solares
Datos
Descripción
We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.
Internacional
Si
JCR del ISI
Si
Título de la revista
Journal of Applied Physics
ISSN
0021-8979
Factor de impacto JCR
2,168
Información de impacto
Volumen
112
DOI
Número de revista
11
Desde la página
113514-1
Hasta la página
113514-5
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: David Pastor Pastor UPM
  • Autor: Javier Olea Ariza UPM
  • Autor: A. Muñoz-Martín
  • Autor: A. Climent-Font
  • Autor: I. Martil
  • Autor: G. González-Díaz
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar