Memorias de investigación
Research Publications in journals:
Electronic and Photon Absorber Properties of Cr-Doped Cu2ZnSnS4
Year:2012
Research Areas
  • Physic chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Other technologies
Information
Abstract
The Cu2ZnSnS4 (CZTS) semiconductor is a potential photovoltaic material due to its optoelectronic properties. These optoelectronic properties can be potentially improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using Cr as an impurity. We carried out first-principles calculations within the density functional theory analyzing three substitutions: Cu, Sn, or Zn by Cr. In all cases, the Cr introduces a deeper band into the host energy bandgap. Depending on the substitution, this band is full, empty, or partially full. The absorption coefficients in the independent-particle approximation have also been obtained. Comparison between the pure and doped host's absorption coefficients shows that this deeper band opens more photon absorption channels and could therefo:e increase the solar-light absorption with respect to the host.
International
Si
JCR
Si
Title
Journal of Physical Chemistry C
ISBN
1932-7447
Impact factor JCR
4,805
Impact info
Volume
116
10.1021/jp306283v
Journal number
44
From page
23224
To page
23230
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física