Descripción
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The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Journal of Applied Physics |
ISSN
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0021-8979 |
Factor de impacto JCR
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2,168 |
Información de impacto
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Volumen
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112 |
DOI
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10.1063/1.4770464 |
Número de revista
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12 |
Desde la página
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124518-1 |
Hasta la página
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124518-6 |
Mes
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SIN MES |
Ranking
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