Memorias de investigación
Communications at congresses:
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
Year:2012

Research Areas
  • Engineering,
  • Electronic technology and of the communications

Information
Abstract
Relacionado con líneas de investigación del GDS del ISOM http://www.isom.upm.es/investigacion.php
International
Si
Congress
International Workshop on Nitride Semiconductors
960
Place
Sapporo (Japan), 2012
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
14/10/2012
End Date
19/10/2012
From page
0
To page
3
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica