Memorias de investigación
Research Publications in journals:
Analysis of the surface state of epi-ready Ge wafers
Year:2012
Research Areas
  • Electronic technology and of the communications
Information
Abstract
The surface state of Ge epi-ready wafers (such as those used on III?V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.
International
Si
JCR
Si
Title
Applied Surface Science
ISBN
0169-4332
Impact factor JCR
2,103
Impact info
Volume
258
10.1016/j.apsusc.2012.05.015
Journal number
20
From page
8166
To page
8170
Month
AGOSTO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física