Descripción
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With the final goal of integrating IIIV materials to silicon for tandem solar cells, the influence of the metal?organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III?V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Japanese Journal of Applied Physics |
ISSN
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0021-4922 |
Factor de impacto JCR
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1,058 |
Información de impacto
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Volumen
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51 |
DOI
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10.1143/JJAP.51.10ND05 |
Número de revista
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Desde la página
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10ND05-1 |
Hasta la página
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10ND05-4 |
Mes
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OCTUBRE |
Ranking
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