Descripción
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The electronic properties and the low environmental impact of Cu?3?BiS?3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu?3?BiS?3 have been obtained using two different exchange?correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Progress in Photovoltaics |
ISSN
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1099-159X |
Factor de impacto JCR
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5,789 |
Información de impacto
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Volumen
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DOI
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10.1002/pip.2173 |
Número de revista
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Desde la página
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1 |
Hasta la página
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6 |
Mes
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SIN MES |
Ranking
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