Abstract
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The electronic properties and the low environmental impact of Cu?3?BiS?3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu?3?BiS?3 have been obtained using two different exchange?correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. | |
International
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JCR
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Si |
Title
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Progress in Photovoltaics |
ISBN
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1099-159X |
Impact factor JCR
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5,789 |
Impact info
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Volume
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10.1002/pip.2173 |
Journal number
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From page
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1 |
To page
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6 |
Month
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SIN MES |
Ranking
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