Memorias de investigación
Research Publications in journals:
Estimation of Local Crystallization of a-Si:H Thin Films by Nanosecond Pulsed Laser Irradiation Through Local Temperature Simulation
Year:2012

Research Areas
  • Engineering

Information
Abstract
We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355 nm), visible (532 nm) and IR (1064 nm), and KrF (248 nm) excimer laser sources. Samples of hydrogenated amorphous silicon thin films were irradiated and characterized with MicroRaman techniques. A finite element model (FEM) was developed in COMSOL to simulate the process. The numerical and experimental results are presented, proving that the process can be predicted with a model based on heat transport.
International
Si
JCR
No
Title
Physics Procedia
ISBN
1875-3892
Impact factor JCR
Impact info
Volume
39
Journal number
From page
286
To page
294
Month
SIN MES
Ranking
Participants
  • Autor: Oscar Garcia Garcia UPM
  • Autor: Juan José García-Ballesteros . UPM
  • Autor: D. Munoz-Martin UPM
  • Autor: Sara Núñez Sánchez UPM
  • Autor: Miguel Morales Furio UPM
  • Autor: J. Cárabe CIEMAT
  • Autor: I. Torres CIEMAT
  • Autor: J.J. Gandía CIEMAT
  • Autor: Carlos Luis Molpeceres Alvarez UPM

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Investigación en Ingeniería y Aplicaciones del Láser
  • Centro o Instituto I+D+i: Centro Laser
  • Departamento: Física Aplicada a la Ingeniería Industrial