Memorias de investigación
Ponencias en congresos:
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Año:2012
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well- known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.
Internacional
Si
Nombre congreso
8th International Conference on Concentrating Photovoltaic Systems
Tipo de participación
960
Lugar del congreso
Toledo (Spain)
Revisores
Si
ISBN o ISSN
0094-243X
DOI
Fecha inicio congreso
16/04/2013
Fecha fin congreso
18/04/2013
Desde la página
0
Hasta la página
0
Título de las actas
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física