Memorias de investigación
Communications at congresses:
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Year:2012
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well- known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.
International
Si
Congress
8th International Conference on Concentrating Photovoltaic Systems
960
Place
Toledo (Spain)
Reviewers
Si
ISBN/ISSN
0094-243X
Start Date
16/04/2013
End Date
18/04/2013
From page
0
To page
0
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física