Ponencias en congresos:
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology
Año:2012
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well- known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties. | |
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Internacional
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Si |
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Nombre congreso
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8th International Conference on Concentrating Photovoltaic Systems |
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Tipo de participación
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960 |
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Lugar del congreso
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Toledo (Spain) |
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Revisores
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Si |
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ISBN o ISSN
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0094-243X |
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DOI
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Fecha inicio congreso
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16/04/2013 |
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Fecha fin congreso
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18/04/2013 |
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Desde la página
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0 |
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Hasta la página
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0 |
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Título de las actas
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Optimization of the Silicon Subcell for III-V on Silicon Multijunction Solar Cells: Key Differences with Conventional Silicon Technology |
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Participantes
- Autor: Elisa Garcia-Tabares Valdivieso (UPM)
- Autor: Diego Martín Martín (UPM)
- Autor: Ivan Garcia Vara (UPM)
- Autor: Jean François Leliévre
- Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física
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