Abstract
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In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior. | |
International
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Si |
Congress
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38th IEEE Photovoltaic Specialists Conference |
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960 |
Place
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Austin, Texas (EEUU) |
Reviewers
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Si |
ISBN/ISSN
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978-1-4673-0066-7 |
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Start Date
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03/06/2012 |
End Date
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08/06/2012 |
From page
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385 |
To page
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389 |
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"ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells" |