Memorias de investigación
Communications at congresses:
ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells
Year:2012
Research Areas
  • Electronic technology and of the communications
Information
Abstract
In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.
International
Si
Congress
38th IEEE Photovoltaic Specialists Conference
960
Place
Austin, Texas (EEUU)
Reviewers
Si
ISBN/ISSN
978-1-4673-0066-7
Start Date
03/06/2012
End Date
08/06/2012
From page
385
To page
389
"ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells"
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física