|
Descripción
|
|
|---|---|
| Certainly one of the most fascinating applications of plasmonics is in active structures like nanolasers, optical transistors and photonic switches, where a metal nanostructure is combined with single emitter, for example a semiconductor quantum dot (QD). Such hybrid nanostructures can easily be scaled to subwavelength dimensions. However, fabrication of such devices requires single-nanometer precise control of the separation of the metal nanostructure and the emitter due to the extremely strong confinement of the electromagnetic field of the surface plasmon resonance (SPR) supported by the metal nanostructures. Our approach to solve this problem is based on the self-alignment of epitaxial metal nanocrystals on near surface InAs QDs, all grown by molecular beam epitaxy (MBE). It has been demonstrated for In [1], as well as Ag nanocrystals [2], the latter metal being the material of choice for plasmonic applications, offering the lowest resistive losses. Moreover, this approach, being based on standard epitaxial growth technology, offers the possibility of integration of active plasmonic nanostructures with existing photonic and electronic semiconductor devices. In the talk I will present our latest results of the self-alignment of epitaxial Ag nanocrystals on epitaxial near surface InAs QDs grown on GaAs (100) substrates by MBE. The SPR wavelength of the Ag nanocrystals can be easily tuned over a wide range, covering the emission wavelength of the QDs. Low temperature Photoluminescence (PL) measurements reveal enhanced intensity of the emission, with lines from individual QDs being resolved. | |
|
Internacional
|
No |
|
Nombre congreso
|
Cursos y Seminarios impartidos |
|
Entidad organizadora
|
ISOM |
|
Nacionalidad Entidad
|
Sin nacionalidad |
|
Lugar/Ciudad de impartición
|
ISOM-ETSIT-UPM |
|
Fecha inicio
|
26/01/2012 |
|
Fecha fin
|
26/01/2012 |